Instructions for Preparing Camera-Ready Summaries for SSDM'98
نویسندگان
چکیده
The optical charge pumping method (OCPM) for extracting the spatial distribution of the interface state density (Nit) is proposed. By combining the concept of local threshold voltage in CPM and the drain current generated by the trapped electrons excited from the interface states to the conduction band by incident photons, the Nit is successfully extracted in the SONOS-type flash memory cell transistor undergoing program/erase(P/E) cycles. Extracted lateral profile explains the trend of increase of Nit with P/E cycling very well, with respect to corresponding P/E conditions.
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تاریخ انتشار 2006